收藏本站

Si4890BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.012 at V GS = 10 V
0.016 at V GS = 4.5 V
I D (A) a
16
14
Q g (Typ.)
10 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
APPLICATIONS
? Notebook
- System Power
SO- 8
- Adapter Switch
? DC/DC
D
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
Top V ie w
S
Orderin g Information: Si4890BDY-T1-E3 (Lead (P b )-free)
Si4890BDY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 25
16
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
12.9
10.7 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
8 .6 b, c
60
5.1
2.2 b, c
20
20
A
mJ
T C = 25 °C
5.7
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.6
2.5 b, c
W
T A = 70 °C
1.6 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
40
1 8
50
22
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 69502
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4890DY-T1-GE3 MOSFET N-CH 30V 11A 8-SOIC
SI4894BDY-T1-GE3 MOSFET N-CH 30V 8.9A 8-SOIC
SI4904DY-T1-GE3 MOSFET N-CH 40V 8-SOIC
SI4908DY-T1-GE3 MOSFET N-CH DUAL 40V 5A 8-SOIC
SI4914BDY-T1-E3 MOSFET N-CH 30V 8-SOIC
SI4914DY-T1-E3 MOSFET DUAL N-CH 30V 8-SOIC
SI4916DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4920DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
相关代理商/技术参数
SI4890BDY-T1-GE3 功能描述:MOSFET 30V 16A 5.7W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4890DY 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4890DY-E3 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4890DY-T1 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4890DY-T1-E3 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4890DY-T1-GE3 功能描述:MOSFET 30V 11A 2.5W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4892DY 功能描述:MOSFET 30V 12.4A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4892DY-E3 功能描述:MOSFET 30V 12.4A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube